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hanbit hf08 - cs2501 url : www.hbe.co.kr 1 hanbit electronics co. ltd rev_02(august,2002) pin assignment general description the h f08 - cs2501 is a high - speed flash read only memory (from) module containing 2 , 097 , 152 words organized in a x32bit configuration. the module consists of four 2m x 8bit from mounted on a 80 - pin, single - sided, fr4 - printed circ uit board. commands are written to the command register using standard microprocessor write timings. register contents serve as input to an internal state - machine, which controls the erase and programming circuitry. write cycles also internally latch addre sses and data needed for the programming and erase operations. output enable (/oe) and write enable (/we) can set the memory input and output. when from module is disable condition the module is becoming power standby mode, system designer can get low - powe r design. all module components may be powered from a single +5v dc power supply and all inputs and outputs are ttl - compatible. features w access time : 75, 90 and 120ns w high - density 8mbyte design w high - reliability, low - power design w single + 5v 0.5v power supply w easy memory expansion w all inputs and outputs are ttl - compatible w fr4 - pcb design w low profile 72 - pin simm w minimum 1 ,0 00,000 write/erase cycle w sectors erase architecture w sector group protection w temporary sector group unprotection w the used device is am29f016b option s marking w timing 90 n s access - 90 w packages 80 - pin simm m pin symbol pin symbol pin symbol 1 vss 28 dq14 55 a17 2 vcc 29 dq13 56 a18 3 nc 30 dq12 57 a19 4 a3 31 dq11 58 a20 5 a2 3 2 dq10 59 /ce1 6 a1 33 dq9 60 /we1 7 a0 34 dq8 61 /oe1 8 dq0 35 /ce0 62 vss 9 dq1 36 vcc 63 dq24 10 dq2 37 pd5 64 dq25 11 dq3 38 a11 65 dq26 12 vss 39 a12 66 dq27 13 dq4 40 a13 67 dq28 14 dq5 41 a14 68 dq29 15 dq6 42 a15 69 dq30 16 dq7 43 vss 70 dq31 17 /oe0 44 dq16 71 nc 18 /we0 45 dq17 72 vcc 19 a4 46 dq18 73 nc 20 a5 47 dq19 74 nc 21 a6 48 dq20 75 pd1 22 a7 49 dq21 76 pd2 23 a8 50 dq22 77 pd3 24 a9 51 dq23 78 vss 25 vss 52 nc 79 pd4 26 a10 53 a16 80 vss 27 dq15 54 vss flash - rom module 8mb yte ( 2 m x 32 - bit) , 80pin - simm, 5v part no. hf08 - cs2501 80 - pin simm top view
hanbit hf08 - cs2501 url : www.hbe.co.kr 2 hanbit electronics co. ltd rev_02(august,2002) dq0 - dq31 a0 C a2 0 32 a0 - 20 /we /oe dq 0 - 7 /ce u1 ry - by / reset a0 - 20 /we /oe dq 8 - 15 /ce u 2 ry - by / reset a0 - 20 /we /oe dq16 - 23 /ce u 3 ry - by / reset a0 - 20 /we /oe dq 24 - 31 /ce u 4 ry - by / reset / we0 / we 0 / we 1 / we 1 / oe 1 /c e0 ry - /by1 /reset 21 /oe0 /ry - by0 functional block dia gram
hanbit hf08 - cs2501 url : www.hbe.co.kr 3 hanbit electronics co. ltd rev_02(august,2002) truth table mode /oe /ce /we dq power standby x h x high - z standby not selected h l h high - z active read l l h q active write or erase x l l d a ctive note : x means don t care absolute maximum ratings parameter symbol rating voltage with respect to ground all other pins v in,out - 2.0v to + 7.0 v voltage with respect to ground vcc v cc - 2.0v to + 7 .0v storage temperature t stg - 65 o c to +12 5 o c operating temperature t a - 55 o c to +125 o c power dissipation p d 4w w stresses greater than those listed under " absolute maximum ratings" may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect reliability. recommended dc opera ting conditions parameter symbol min typ . max vcc for 10% device supply voltages vcc 4.5v 5.5v ground v ss 0 0 0 dc and operating cha racteristics (0 o c t a 70 o c ; vcc = 5v 0.5v ) parameter test conditions symbol min max units input leakage current vcc=vcc ma x, v in = gnd to vcc i l1 1.0 m a output leakage current vcc=vcc max, v out = gnd to vcc i l0 1.0 m a output high voltage i oh = - 2.5ma, vcc = vcc min v oh 2.4 v output low voltage i ol = 12ma, vcc =vcc min v ol 0.45 v vcc active current for read(1) /ce = v il , /oe=v ih , i cc1 40 ma vcc active current for program or erase(2) /ce = v il , /oe=v ih i cc2 60 ma vcc standby current /ce= v ih i cc3 1.0 ma low vcc lock - out voltage v lko 3.2 4.2 v notes : 1. the i cc current listed is typically less than 2ma /mhz, with /oe at v ih . 2. i cc active while embedded algorithm (program or erase) is in progress 3. maximum icc current specifications are tested with vcc=vcc max
hanbit hf08 - cs2501 url : www.hbe.co.kr 4 hanbit electronics co. ltd rev_02(august,2002) erase and programmin g performance limits parameter min. typ. max. unit comments sector erase time - 1 8 sec excludes 00h programming prior to erasure byte programming time - 7 3 00 m s excludes system - level overhead chip programming time - 14.4 43.2 sec excludes system - level overhead tsop capac itance parameter symbol parameter descrip tion test setup min max unit c in input capacitance v in = 0 6 7.5 pf c out output capacitance v out = 0 8 .5 12 pf c in2 control pin capacitance v in = 0 7.5 9 pf notes : test conditions t a = 25 o c, f=1.0 mhz. ac characteristics u read only operations characteristics parameter symbols jedec standard description test setup - 75 - 90 unit t avav t rc read cycle time min 70 90 ns t avqv t acc address to outpu t delay /ce = v il /oe = v il max 70 90 ns t elqv t ce chip enable to output delay /oe = v il max 70 90 ns t glqv t oe chip enable to output delay max 40 40 ns t ehqz t df chip enable to output high - z max 20 2 0 ns t ghqz t df output enable to output high - z max 20 20 ns t axqx t qh output hold time from addresses, /ce or /oe, whichever occurs first min 0 0 ns
hanbit hf08 - cs2501 url : www.hbe.co.kr 5 hanbit electronics co. ltd rev_02(august,2002) test specifications test condition all speed options unit output load 1ttl gate output load capacitance, c l (including jig capacitance) 1 00 pf input rise and full times 20 ns input pulse levels 0.45 - 2.4 v input timing measurement reference levels 0.8 v output timing measurement reference levels 2.0 v erase/program operations parameter symbols jedec standard description - 75 - 90 unit t avav t wc write cycle time min 70 90 ns t avwl t as address setup time min 0 0 ns t wlax t ah address hold time min 40 45 ns t dvwh t ds data setup time min 40 45 ns t whdx t dh data hold time min 0 0 ns t oes output enable setup time min 0 0 ns t ghwl t ghwl read recover time before write min 0 0 ns t elwl t cs /ce setup time min 0 0 ns t wheh t ch /ce hold time min 0 0 ns t wlwh t wp write pulse width min 40 4 5 ns t whwl t wph write pulse width high min 20 2 0 ns t whwh1 t wh wh1 byte programming operation typ 7 7 m s 5.0v device under test 2.7k w diodes = in3064 or equivalent 6.2k w in3064 or equivalent c l note : c l = 100pf including jig c apacitance
hanbit hf08 - cs2501 url : www.hbe.co.kr 6 hanbit electronics co. ltd rev_02(august,2002) t whwh2 t whwh2 sector erase operation (note1) typ 1 1 sec t v cs vcc set up time min 50 50 m s notes : 1. this does not include the preprogramming time 2. this timing is only for sector pro tect operations u erase/program operations alternate /ce controlled writes parameter symbols jedec standard description - 75 - 9 0 unit t avav t wc write cycle time min 70 9 0 ns t avwl t as address setup time min 0 0 ns t wlax t ah address ho ld time min 40 45 ns t dvwh t ds data setup time min 40 45 ns t whdx t dh data hold time min 0 0 ns t oes output enable setup time min 0 0 ns t ghwl t ghwl read recover time before write min 0 0 ns t elwl t cs /ce setup time min 0 0 ns t wheh t ch /ce hold time min 0 0 ns t wlwh t wp write pulse width min 40 45 ns t whwl t wph write pulse width high min 20 20 ns t whwh1 t whwh1 byte programming operation typ 7 7 m s t whwh2 t whwh2 sector erase operation (note1) typ 1 1 sec notes : 1. this does not include the preprogramming time 2. this timing is only for sector protect operations
hanbit hf08 - cs2501 url : www.hbe.co.kr 7 hanbit electronics co. ltd rev_02(august,2002) u read operations timing u reset timing
hanbit hf08 - cs2501 url : www.hbe.co.kr 8 hanbit electronics co. ltd rev_02(august,2002) u program operations timing u chip/sector erase operation timings
hanbit hf08 - cs2501 url : www.hbe.co.kr 9 hanbit electronics co. ltd rev_02(august,2002) u data# polling times(during embedded algorithms) u toggle# bit timings (during embedded algorithms)
hanbit hf08 - cs2501 url : www.hbe.co.kr 10 hanbit electronics co. ltd rev_02(august,2002) u sector protect unprotect timeing diagram u alternate ce# co ntrolled write operating timings
hanbit hf08 - cs2501 url : www.hbe.co.kr 11 hanbit electronics co. ltd rev_02(august,2002) p ackage dimensions 0.25 mm max min 2.54 mm 1.27 (solder & gold plating) gold: 1.04 0. 10 mm solder: 0.914 0. 10 mm 1.27( 0.08)
hanbit hf08 - cs2501 url : www.hbe.co.kr 12 hanbit electronics co. ltd rev_02(august,2002) o r dering information part number density org. package compone nt number vcc speed hf08 - cs2501 8mbyte 2m 32bit 80pin - simm 4ea 5.0v 90ns

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